论文信息 - Picosecond Photoconductivity in Amorphous Germanium Chalcogenides

Picosecond Photoconductivity in Amorphous Germanium Chalcogenides

Mesure de la photoconductivite dans les couches minces amorphes Ge 50 Se 50 ,GeSe 2 ,Ge 30 Se 70 et Ge 30 Se 60 Te 10 soumises ou non a un recuit. Ces materiaux permettent de produire de tres petites commutations optoelectroniques dont l'efficacite est due a un faible rendement de la generation de la photoconductivite et a une faible mobilite des porteurs de charge

[1] R. Carius,et al. Photoluminescence and photoconductivity of a-Si:H at high electric fields , 1987 .

[2] B. Weinstein,et al. Ultrafast time-resolved photoluminescence—a probe of radiative and non-radiative processes in amorphous tetrahedral and chalcogenide semiconductors , 1985 .

[3] W. Nowick,et al. Picosecond Processes of Laser‐Excited Carriers in Silicon on Sapphire , 1985 .

[4] Monroe,et al. Hopping exponential band tails. , 1985, Physical review letters.

[5] H. Naito,et al. Transient Photocurrent in Amorphous (As2Se3):Te Thin Films , 1984 .

[6] M. Silver,et al. Dispersive Hopping Transport from an Exponential Energy Distribution of Sites , 1982 .

[7] M. Kastner,et al. Photocurrent Transient Spectroscopy: Measurement of the Density of Localized States in a -As 2 Se 3 , 1981 .

[8] A. Rose,et al. A physical interpretation of dispersive transport in disordered semiconductors , 1981 .

[9] J. Tauc,et al. Picosecond Relaxation of Optically Induced Absorption in Amorphous Semiconductors , 1979 .

[10] J. Tauc,et al. Optical Properties of Amorphous Semiconductors , 1974 .