A reliable control system for measurement on film thickness in copper chemical mechanical planarization system.

In recent years, a variety of film thickness measurement techniques for copper chemical mechanical planarization (CMP) are subsequently proposed. In this paper, the eddy-current technique is used. In the control system of the CMP tool developed in the State Key Laboratory of Tribology, there are in situ module and off-line module for measurement subsystem. The in situ module can get the thickness of copper film on wafer surface in real time, and accurately judge when the CMP process should stop. This is called end-point detection. The off-line module is used for multi-points measurement after CMP process, in order to know the thickness of remained copper film. The whole control system is structured with two levels, and the physical connection between the upper and the lower is achieved by the industrial Ethernet. The process flow includes calibration and measurement, and there are different algorithms for two modules. In the process of software development, C++ is chosen as the programming language, in combination with Qt OpenSource to design two modules' GUI and OPC technology to implement the communication between the two levels. In addition, the drawing function is developed relying on Matlab, enriching the software functions of the off-line module. The result shows that the control system is running stably after repeated tests and practical operations for a long time.

[1]  Wuliang Yin,et al.  Simultaneous measurement of distance and thickness of a thin metal plate with an electromagnetic sensor using a simplified model , 2003, IEEE Transactions on Instrumentation and Measurement.

[2]  Guang Sheng Ren,et al.  Measurement and Control System for Traction Motor Based on OPC Technology , 2012 .

[3]  Michael R. Oliver,et al.  Chemical-mechanical planarization of semiconductor materials , 2004 .

[4]  D. W. Holley.  Understanding and using OPC for maintenance and reliability applications , 2004 .

[5]  Daniel C. Edelstein,et al.  VLSI on-chip interconnection performance simulations and measurements , 1995, IBM J. Res. Dev..

[6]  Arun K. Sikder,et al.  Chemical mechanical planarization for microelectronics applications , 2004 .

[7]  David Starosvetsky,et al.  Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective , 2007 .

[8]  Xinchun Lu,et al.  Numerical and experimental investigation on multi-zone chemical mechanical planarization , 2011 .

[9]  Ashok Kumar,et al.  Effect of temperature on copper damascene chemical mechanical polishing process , 2008 .

[10]  Takashi Fujita,et al.  Development of Original End Point Detection System Utilizing Eddy Current Variation Due to Skin Effect in Chemical Mechanical Polishing , 2011 .

[11]  Xinchun Lu,et al.  In-situ measurement of Cu film thickness during the CMP process by using eddy current method alone , 2013 .

[12]  Wuliang Yin,et al.  Thickness measurement of non-magnetic plates using multi-frequency eddy current sensors , 2007 .

[13]  Wuliang Yin,et al.  Thickness Measurement of Metallic Plates With an Electromagnetic Sensor Using Phase Signature Analysis , 2008, IEEE Transactions on Instrumentation and Measurement.

[14]  Y. Shimanuki,et al.  OLE for process control (OPC) for new industrial automation systems , 1999, IEEE SMC'99 Conference Proceedings. 1999 IEEE International Conference on Systems, Man, and Cybernetics (Cat. No.99CH37028).

[15]  Mahadevaiyer Krishnan,et al.  Chemical mechanical planarization: slurry chemistry, materials, and mechanisms. , 2010, Chemical reviews.

[16]  Luhe Hong,et al.  The application guide of mixed programming between MATLAB and other programming languages , 2010, 2010 The 2nd International Conference on Computer and Automation Engineering (ICCAE).

[17]  Ronald J. Gutmann,et al.  Copper-Fundamental Mechanisms for Microelectronic Applications , 2000 .

[18]  Charles Chen,et al.  In-situ CMP copper endpoint control system , 2001, 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203).

[19]  Arthur Tay,et al.  Using the OPC standard for real-time process monitoring and control , 2005, IEEE Software.