Correlation of depth resolution and preferential sputtering in depth profiles of thin layers by Secondary Ion Mass Spectrometry (SIMS)
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J. Wang | S. Hofmann | S. Lian | Y. Han | Q. R. Deng
[1] S. Lian,et al. Depth resolution and preferential sputtering in depth profiling of delta layers , 2018, Applied Surface Science.
[2] A. Franquet,et al. Inorganic material profiling using Arn+ cluster: Can we achieve high quality profiles? , 2018, Applications of Surface Science.
[3] M. López-López,et al. On the delta-type doping of GaAs-based heterostructures with manganese compounds , 2017 .
[4] S. Hofmann,et al. Depth resolution and preferential sputtering in depth profiling of sharp interfaces , 2017 .
[5] M. Drozdov,et al. Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer‐thin layers , 2017 .
[6] K. Shimizu,et al. Quantitative reconstruction of the GDOES sputter depth profile of a monomolecular layer structure of thiourea on copper , 2015 .
[7] Thomas H. Epps,et al. Determination of lithium-ion distributions in nanostructured block polymer electrolyte thin films by X-ray photoelectron spectroscopy depth profiling. , 2015, ACS nano.
[8] J. Kovač,et al. Analytical and numerical depth resolution functions in sputter profiling , 2014 .
[9] J. Wang,et al. Progress in quantitative sputter depth profiling using the MRI-model , 2003 .
[10] H. Takenaka,et al. Evaluation of SIMS depth resolution using delta-doped multilayers and mixing–roughness-information depth model , 2003 .
[11] Ri-Sheng Li,et al. Surface composition changes in Au–Cu alloys: interplay of mass‐related preferential sputtering and bombardment‐induced segregation , 1999 .
[12] S. Hofmann. From depth resolution to depth resolution function: refinement of the concept for delta layers, single layers and multilayers , 1999 .
[13] M. Dowsett,et al. Quantification of secondary-ion-mass spectroscopy depth profiles using maximum entropy deconvolution with a sample independent response function , 1998 .
[14] S. Hofmann. Atomic mixing, surface roughness and information depth in high‐resolution AES depth profiling of a GaAs/AlAs superlattice structure , 1994 .
[15] D. G. Jones,et al. Fundamental parameters in quantitative depth profiling and bulk analysis with glow discharge spectrometry , 1993 .
[16] W. Mader,et al. Determination of the atomic mixing layer in sputter profiling of Ta/Si multilayers by TEM and AES , 1990 .
[17] Fine,et al. Temperature-dependent radiation-enhanced diffusion in ion-bombarded solids. , 1988, Physical review letters.
[18] N. Q. Lam. Ion bombardment effects on the near-surface composition during sputter profiling† , 1988 .
[19] D. E. Harrison,et al. A summary of the theory of the preferential sputtering of alloys , 1985 .
[20] J. Kirschner. Surface segregation and its implications for sputtering , 1985 .