Efficient large-signal FET parameter extraction using harmonics

The authors present a novel approach to large-signal nonlinear parameter extraction of GaAs metal-semiconductor field-effect transistor (MESFET) devices measured under harmonic conditions. Powerful nonlinear adjoint-based optimization simultaneously processes multibias, multi-power-input, multi-fundamental-frequency excitations and multiharmonic measurements to reveal the parameters of the intrinsic FET. One test successfully processed 111 error functions of 20 model parameters. The technique was implemented in a program called HarPE (harmonic balance driven model parameter extractor).<<ETX>>