Original cabling conditions to insure balanced current during switching transitions between paralleled semiconductors

This paper deals with the problem of paralleling components. First, general investigations concerning the influence of stray inductances on the current and voltage differences between n paralleled components are presented. Original cabling conditions are deduced to insure balanced electrical constraints. Then, a power module involving two paralleled MOSFETs is analysed. To validate the original presented conditions, two different choppers, involving paralleled power modules have been built, with different layouts. Experimental and simulated results confirm the validity of the proposed rules.

[1]  Derek A. Paice Multiple Paralleling of Power Diodes , 1975, IEEE Transactions on Industrial Electronics and Control Instrumentation.

[2]  S. Kobayashi,et al.  Advanced technology for a new NPT-IGBT module design , 1998, Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).

[3]  Dushan Boroyevich,et al.  Extraction of parasitics within wire-bond IGBT modules , 1998, APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition.

[4]  James Roudet,et al.  Influence of the cabling geometry on paralleled diodes in a high power rectifier , 1996, IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting.

[5]  Albert E. Ruehli,et al.  Three-dimensional interconnect analysis using partial element equivalent circuits , 1992 .