The application field of high power semiconductor lasers is growing rapidly and covers e.g. solid state laser pumping, metal and plastic welding, hard and soft soldering, suface treatment and others. Preferably those applications are attractive, which do not require extremely high beam quality. We have investigated high power diode-laser bars from 808 nm to 980 nm. The scope of this presentation is on focusability and beam quality. For better beam shaping structures with reduced fill factor of 25% to 30% were developed. They were operated in continuous wave operation at power levels of up to 55 W. Tests indicate extrapolated lifetimes of more than 100,000 hours at 40 W at 980 nm cw and about 10,000 hours at 45 W - 50 W at 940 nm and 808 nm. Monolithically stacked NonostacksR were investigated. Operation up to 100°C with excellent lifetimes could be demonstrated. New concepts and applications for low mode number high power diode lasers like tapered laser bars are presented. Examples for various current areas of interest in European research facilities will be given.