Monolithically integrated low-power phototransceiver incorporating InGaAs/GaAs quantum-dot microcavity LED and modulated barrier photodiode

A low-power monolithically integrated phototransceiver, consisting of a high-sensitivity modulated barrier photodiode and a In0.4Ga0.6As/GaAs self-organised quantum-dot microcavity light-emitting diode, is demonstrated. The modulated barrier photodiode exhibits a responsivity of 1.8 × 103 A/W, for 630 nm excitation, at an input power of 10 nW. The output wavelength is 980 nm. The phototransceiver exhibits an optical gain of 18 dB and power dissipation of 110 µW for an input power of 10 nW.