Optically excited microwave ring resonators in gallium arsenide
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Microstrip ring resonators with fundamental frequencies near 3.5 GHz have been fabricated in semi-insulating GaAs using an electroplating technique for conductor deposition. Test signals were coupled into the resonators by focusing modulated light into a photoconductive microstripline gap. Loaded Q-factors measured for one of the rings with optical excitation ranged from 54 at the fundamental frequency to 103 at the third harmonic.
[1] G. Mourou,et al. Subpicosecond electrooptic sampling: Principles and applications , 1986 .
[2] J. A. Valdmanis,et al. 1 THz-bandwidth proper for high-speed devices and integrated circuits , 1987 .
[3] Naomi J. Halas,et al. Capacitance free generation and detection of subpicosecond electrical pulses on coplanar transmission lines , 1988 .
[4] David M. Bloom,et al. Picosecond optical sampling of GaAs integrated circuits , 1988 .