Ageing of tunnel junctions formed in oxygen plasma and in air

Ageing of thin film tunnel junctions of the type Al-Al2O3-Pb in laboratory conditions (24 °C, 65 % RH) was examined. The alumina insulating barrier was formed by two methods: by oxidation of the lower Al electrode in oxygen plasma and by oxidation in air. It was found that the junctions with the alumina barrier formed in plasma aged faster than those with the barrier formed in air. The reason is that the films formed in oxygen plasma are more porous in comparison with the films formed in air and therefore are more prone to oxidation.