论文信息 - Growth by Molecular Beam Epitaxy and Optical Properties of a Ten‐Period AlGaN/AlN Distributed Bragg Reflector on (111)Si - 字舞流文

Growth by Molecular Beam Epitaxy and Optical Properties of a Ten‐Period AlGaN/AlN Distributed Bragg Reflector on (111)Si

J. Massies | J. Leymarie | A. Vasson | M. Leroux | F. Semond | G. Malpuech | P. Disseix | N. Schnell | N. Antoine-Vincent