Investigation of the initial deposition steps and the interfacial layer of Atomic Layer Deposited (ALD) Al2O3 on Si
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A. Boudouvis | G. Gakis | H. Martínez | Y. Tison | C. Vahlas | B. Caussat | E. Scheid | D. Ruch | S. Dourdain | H. Vergnes | J. Bour