Rewritable Storage Channels with Hidden State
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Sekhar Tatikonda | Ramji Venkataramanan | Michele Franceschini | Luis Lastras-Monta | M. Franceschini | S. Tatikonda | R. Venkataramanan | Luis Lastras-Monta
[1] Ashish Jagmohan,et al. Coding for Multilevel Heterogeneous Memories , 2010, 2010 IEEE International Conference on Communications.
[2] P ? ? ? ? ? ? ? % ? ? ? ? , 1991 .
[3] Paul H. Siegel,et al. Codes for Write-Once Memories , 2012, IEEE Transactions on Information Theory.
[4] Sekhar Tatikonda,et al. Coding strategies for the uniform noise rewritable channel with hidden state , 2012, 2012 IEEE International Symposium on Information Theory Proceedings.
[5] M. Hosomi,et al. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[6] Amos Lapidoth,et al. On the storage capacity of rewritable memories , 2010, 2010 IEEE 26-th Convention of Electrical and Electronics Engineers in Israel.
[7] Steven Kay,et al. Fundamentals Of Statistical Signal Processing , 2001 .
[8] Stephan ten Brink,et al. A close-to-capacity dirty paper coding scheme , 2004, IEEE Transactions on Information Theory.
[9] Luis Alfonso Lastras-Montaño,et al. On the Capacity of Memoryless Rewritable Storage Channels , 2014, IEEE Transactions on Information Theory.
[10] Thomas M. Cover,et al. Elements of Information Theory , 2005 .
[11] Tsachy Weissman,et al. Capacity of Channels With Action-Dependent States , 2009, IEEE Transactions on Information Theory.
[12] Ibrahim M. Elfadel,et al. Rewritable Channels With Data-Dependent Noise , 2009, 2009 IEEE International Conference on Communications.
[13] Thomas M. Cover,et al. Comments on Broadcast Channels , 1998, IEEE Trans. Inf. Theory.
[14] Paul H. Siegel,et al. Rewriting Codes for Flash Memories , 2012, IEEE Transactions on Information Theory.
[15] Amos Lapidoth,et al. Computing the capacity of rewritable memories , 2011, 2011 IEEE International Symposium on Information Theory Proceedings.
[16] M. Lanzoni,et al. Program schemes for multilevel flash memories , 2003, Proc. IEEE.
[17] D. Stewart,et al. The missing memristor found , 2008, Nature.
[18] Haralampos Pozidis,et al. Programming algorithms for multilevel phase-change memory , 2011, 2011 IEEE International Symposium of Circuits and Systems (ISCAS).
[19] Michele Franceschini,et al. Superposition coding in rewritable channels , 2010, 2010 Information Theory and Applications Workshop (ITA).
[20] Shlomo Shamai,et al. Nested linear/Lattice codes for structured multiterminal binning , 2002, IEEE Trans. Inf. Theory.
[21] L. A. Lastras-Montao,et al. Rewritable storage channels , 2008, 2008 International Symposium on Information Theory and Its Applications.
[22] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.
[23] Frederick T. Chen,et al. Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance , 2010, 2010 International Electron Devices Meeting.
[24] Luis Alfonso Lastras-Montaño,et al. The capacity of the uniform noise rewritable channel with average cost , 2010, 2010 IEEE International Symposium on Information Theory.
[25] K. Gopalakrishnan,et al. Phase change memory technology , 2010, 1001.1164.
[26] Luis Alfonso Lastras-Montaño,et al. Rewritable storage channels with limited number of rewrite iterations , 2010, 2010 IEEE International Symposium on Information Theory.