Design for reliability in via middle and via last 3-D chipstacks incorporating TSVs
暂无分享,去创建一个
N. Khan | Li Hong Yu | Cheng Cheng Kuo | A D Trigg | Gao Shan | Yong Zhong Xiong | Shi Jing Lin | Teo Keng Hwa
[1] John H. Lau,et al. Three dimensional interconnects with high aspect ratio TSVs and fine pitch solder microbumps , 2009, 2009 59th Electronic Components and Technology Conference.
[2] Li Hong Yu,et al. Design and fabrication of a reliability test chip for 3D-TSV , 2010, 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).
[3] R. Tummala,et al. Failure mechanisms and optimum design for electroplated copper Through-Silicon Vias (TSV) , 2009, 2009 59th Electronic Components and Technology Conference.
[4] B. Swinnen,et al. Extraction of the Appropriate Material Property for Realistic Modeling of Through-Silicon-Vias using μ-Raman Spectroscopy , 2008, 2008 International Interconnect Technology Conference.
[5] John H. Lau,et al. Development of through silicon via (TSV) interposer technology for large die (21×21mm) fine-pitch Cu/low-k FCBGA package , 2009, 2009 59th Electronic Components and Technology Conference.
[6] K. Vaidyanathan,et al. Nonlinear thermal stress/strain analyses of copper filled TSV (through silicon via) and their flip-chip microbumps , 2008, 2008 58th Electronic Components and Technology Conference.
[7] John H. Lau,et al. Development of 3-D silicon die stacked package using flip chip technology with micro bump interconnects , 2009, 2009 59th Electronic Components and Technology Conference.