Thermal component models for electro thermal analysis of multichip power modules

Thermal component models are developed for multi-chip of insulated gate bipolar transistor (IGBT) power electronic modules (PEM) and associated high-power converter heat sinks. The models are implemented in SABER and are combined with the electro-thermal IGBT and diode models to simulate the electro-thermal performance of high power converter systems. The thermal component models are parameterized in terms of structural and material parameters so that they can be readily used to develop a library of component models for the various commercially available power modules. The paper presents model development and implementation in SABER, simulation results, and validation using experimental data.

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