Transparent Oxide Optoelectronics
暂无分享,去创建一个
[1] Hideo Hosono,et al. Field Emission of Electron Anions Clathrated in Subnanometer‐Sized Cages in [Ca24Al28O64]4+(4e–) , 2004 .
[2] T. Kamiya,et al. Title Single-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh (Ln=lanthanide, Ch=chalcogen) , 2004 .
[3] Hideo Hosono,et al. Transparent Organic Thin‐Film Transistor with a Laterally Grown Non‐Planar Phthalocyanine Channel , 2004 .
[4] H. Ohta,et al. Third-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSe , 2004 .
[5] J. Robertson,et al. Doping and hydrogen in wide gap oxides , 2003 .
[6] G. Hubler,et al. Pulsed Laser Deposition of Thin Films , 2003, Handbook of Laser Technology and Applications.
[7] H. Ohta,et al. Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys , 2003 .
[8] H. Mizoguchi,et al. A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes , 2003 .
[9] H. Ohta,et al. Electrical and Optical Properties and Electronic Structures of LnCuOS (Ln = La∼Nd) , 2003 .
[10] K. Ishikawa,et al. Application of a Transparent Conductive Substrate with an Atomically Flat and Stepped Surface to Lateral Growth of an Organic Molecule: Vanadyl Phthalocyanine , 2003 .
[11] Hideo Hosono,et al. High-Density Electron Anions in a Nanoporous Single Crystal: [Ca24Al28O64]4+(4e-) , 2003, Science.
[12] Hideo Hosono,et al. Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO , 2003 .
[13] Hyun-Sik Kim,et al. Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant , 2003 .
[14] H. Ohta,et al. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor , 2003, Science.
[15] H. Ohta,et al. Degenerate p-type conductivity in wide-gap LaCuOS1−xSex (x=0–1) epitaxial films , 2003 .
[16] Hideo Hosono,et al. Single‐Crystalline Films of the Homologous Series InGaO3(ZnO)m Grown by Reactive Solid‐Phase Epitaxy , 2003 .
[17] Benjamin J. Norris,et al. ZnO-based transparent thin-film transistors , 2003 .
[18] Hideo Hosono,et al. Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO , 2003 .
[19] I. Suemune,et al. Nitrogen-Doped p-Type ZnO Layers Prepared with H2O Vapor-Assisted Metalorganic Molecular-Beam Epitaxy , 2002 .
[20] T. Kamiya,et al. Light-induced conversion of an insulating refractory oxide into a persistent electronic conductor , 2002, Nature.
[21] D. C. Reynolds,et al. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy , 2002 .
[22] Sylvain Marsillac,et al. High-efficiency solar cells based on Cu(InAl)Se2 thin films , 2002 .
[23] H. Ohta,et al. Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS , 2002 .
[24] H. Ohta,et al. Novel film growth technique of single crystalline In2O3(ZnO)m (m= integer) homologous compound , 2002 .
[25] H. Hosono,et al. Band gap engineering, band edge emission, and p-type conductivity in wide-gap LaCuOS1−xSex oxychalcogenides , 2002 .
[26] H. Ohta,et al. Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia , 2002 .
[27] H. Ohta,et al. Electronic structure and optical properties of SrCu2O2 , 2002 .
[28] H. Mizoguchi,et al. ZnRh2O4: A p-type semiconducting oxide with a valence band composed of a low spin state of Rh3+ in a 4d6 configuration , 2002 .
[29] H. Ohta,et al. Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure , 2001 .
[30] H. Ohta,et al. Pulsed laser deposition system for producing oxide thin films at high temperature , 2001 .
[31] E. Monroy,et al. Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes , 2001 .
[32] H. Ohta,et al. Amorphous transparent conductive oxide InGaO3(ZnO)m (m≤ 4): a Zn4s conductor , 2001 .
[33] H. Hosono,et al. Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS , 2001 .
[34] K. Wong,et al. Molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors , 2001 .
[35] H. Hosono,et al. Bipolarity in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure , 2001 .
[36] H. Ohta,et al. Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition , 2001 .
[37] H. Hosono,et al. Transparent p-type semiconductor: LaCuOS layered oxysulfide , 2000 .
[38] E. Monroy,et al. Time response analysis of ZnSe-based Schottky barrier photodetectors , 2000 .
[39] David S. Ginley,et al. Transparent Conducting Oxides , 2000 .
[40] K. Kawamura,et al. Current injection emission from a transparent p-n junction composed of p-SrCu~2O~2/n-ZnO , 2000 .
[41] Toru Aoki,et al. ZnO diode fabricated by excimer-laser doping , 2000 .
[42] H. Ohta,et al. Highly electrically conductive indium–tin–oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition , 2000 .
[43] S. Yagi. Highly sensitive ultraviolet photodetectors based on Mg-doped hydrogenated GaN films grown at 380 °C , 2000 .
[44] Tomoji Kawai,et al. p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping , 1999 .
[45] H. Hosono,et al. Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors , 1999 .
[46] Umesh K. Mishra,et al. High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN , 1999 .
[47] E. Muñoz,et al. AlGaN metal–semiconductor–metal photodiodes , 1999 .
[48] Masaki Nakamura,et al. Modulated Structures of Homologous Compounds InMO3(ZnO)m(M=In, Ga;m=Integer) Described by Four-Dimensional Superspace Group , 1998 .
[49] H. Hosono,et al. SrCu2O2: A p-type conductive oxide with wide band gap , 1998 .
[50] Hideo Hosono,et al. P-type electrical conduction in transparent thin films of CuAlO2 , 1997, Nature.
[51] Masashi Kawasaki,et al. Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature , 1997 .
[52] Mwj Menno Prins,et al. Depletion-type thin-film transistors with a ferroelectric insulator , 1997 .
[53] D. C. Reynolds,et al. Optically pumped ultraviolet lasing from ZnO , 1996 .
[54] R. M. Wolf,et al. A ferroelectric transparent thin‐film transistor , 1996 .
[55] R. Jackman,et al. Thin film diamond photodiode for ultraviolet light detection , 1996 .
[56] M. Asif Khan,et al. High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers , 1992 .
[57] Mengyan Shen,et al. Optically pumped lasing of ZnO at room temperature , 1991 .
[58] Tuomo Suntola,et al. Atomic Layer Epitaxy , 1989 .
[59] R. Bunshah. Deposition Technologies for Films and Coatings: Developments and Applications , 1982 .
[60] J. Vossen. Thin Film Processes , 1979 .
[61] T. Minami,et al. Observation of Ultraviolet-Luminescence from the ZnO MIS Diodes , 1974 .
[62] B. W. Thomas,et al. Metal-insulator-semiconductor electroluminescent diodes in single-crystal zinc oxide , 1973 .
[63] F. H. Nicoll,et al. ULTRAVIOLET ZnO LASER PUMPED BY AN ELECTRON BEAM , 1966 .
[64] D. G. Thomas. The exciton spectrum of zinc oxide , 1960 .