论文信息 - Low current wideband amplifier using 0.2 /spl mu/m gate MODFET fabricated by using phase-shift lithography

Low current wideband amplifier using 0.2 /spl mu/m gate MODFET fabricated by using phase-shift lithography

We have developed wideband amplifier that can keep over 10 dB gain at the drain voltage/current of 2 V/10 mA in the frequency range from 100 MHz to 3 GHz. The fabricated IC achieved low noise figure and high IP3 (output) of 1.4 dB and 30 dBm at 800 MHz, respectively. The present IC employs 0.2 /spl mu/m gate delta-doped MODFET structure fabricated by using phase-shift lithography.

[1] T. Hirao,et al. Advanced GaAs-MMIC process technology using high-dielectric constant thin film capacitors by low-temperature RF sputtering method , 1993, 15th Annual GaAs IC Symposium.

[2] D. Ueda,et al. 0.15 /spl mu/m T-shaped gate fabrication for GaAs MODFET using phase shift lithography , 1996 .

[3] Daisuke Ueda,et al. UHF GAAS MULTI-STAGE WIDEBAND AMPLIFIER WITH DUAL FEEDBACK CIRCUITS. , 1987 .