Hydrogen induced drift in palladium gate metal‐oxide‐semiconductor structures

The flat band voltage shift upon hydrogen exposure of palladium gate metal‐oxide‐semiconductor devices is only partly due to a change in the metal work function. Another effect, here called the hydrogen induced drift (HID), also occurs. The wide distribution of time constants of this effect is a limitation in some applications of the sensors. The effect is characterized and its origin is investigated. It is found that the HID is responsible for a much larger part of the voltage shift than was earlier believed. It is also shown that the effect does not occur at a palladium‐alumina interface. The effect of hydrogen on sodium ion drift is examined and it is shown that hydrogen does not give rise to sodium ion drift, but rather increases the image potential barrier for mobile sodium ions at the metal‐silicon dioxide interface. A qualitative model for the hydrogen induced drift on the atomic scale is presented and discussed.

[1]  K. Dobos,et al.  The influence of different insulators on paladium-gate metal-insulator-semiconductor hydrogen sensors , 1984, IEEE Transactions on Electron Devices.

[2]  B. Lalevic,et al.  Mos and schottky diode gas sensors using transition metal electrodes , 1983 .

[3]  Are interface states consistent with Schottky barrier measurements , 1982 .

[4]  I. Lundström,et al.  Hydrogen dissociation on clean and contaminated Pd studied with a Pd-MOS structure and photoelectron spectroscopy , 1982 .

[5]  Jay N. Zemel,et al.  Pd–thin‐SiO2–Si diode. I. Isothermal variation of H2‐induced interfacial trapping states , 1982 .

[6]  B. Lalevic,et al.  Transition metal-gate MOS gaseous detectors , 1982, IEEE Transactions on Electron Devices.

[7]  G. A. Candela,et al.  Measurement of the interlayer between aluminum and silicon dioxide using ellipsometric, capacitance-voltage and auger electron spectroscopy techniques , 1981 .

[8]  Claes Nylander,et al.  A stable hydrogen‐sensitive Pd gate metal‐oxide semiconductor capacitor , 1981 .

[9]  N. F. Rooij,et al.  The solid/liquid interface , 1981 .

[10]  Ingemar Lundström,et al.  Hydrogen sensitive mos-structures: Part 1: Principles and applications , 1981 .

[11]  W. A. Miller,et al.  Physical structure of Al-pSi metal-insulator semiconductor solar cells , 1980 .

[12]  Piet Bergveld,et al.  The influence of the pH on the electrolyte-SiO2-Si system studied by ion-sensitive fet measurements and quasi-static C-V measurements , 1980 .

[13]  T. W. Hickmott.  Dipole layers at the metal‐SiO2 interface , 1980 .

[14]  Robert J. Huber,et al.  Ion-Sensitive Field Effect Transistors , 1980 .

[15]  M. Esashi,et al.  ISFET's using inorganic gate thin films , 1979, IEEE Transactions on Electron Devices.

[16]  O. Leistiko,et al.  The Selectivity and Temperature Characteristics of Ion Sensitive Field Effect Transistors , 1978 .

[17]  N. F. Rooij,et al.  Sensitivity of MOS structures for contamination with H+, Na+, and K+ ions , 1978 .

[18]  J. Stagg.  Drift mobilities of Na+ and K+ ions in SiO2 films , 1977 .

[19]  I. Lundström,et al.  Hydrogen induced interfacial polarization at PdSiO2 interfaces , 1976 .

[20]  C. Svensson,et al.  Hydrogen leak detector using a Pd‐gate MOS transistor , 1975 .

[21]  C. Svensson,et al.  A hydrogen-sensitive Pd-gate MOS transistor , 1975 .

[22]  T. W. Hickmott.  Thermally stimulated ionic conductivity of sodium in thermal SiO2 , 1975 .

[23]  J. Zemel.  Ion-Sensitive Field Effect Transistors and Related Devices , 1975 .

[24]  Ingemar Lundström,et al.  A hydrogen−sensitive MOS field−effect transistor , 1975 .

[25]  F. Edelman,et al.  Reduction of thermally grown SiO2 by Al films , 1974 .

[26]  M. H. Woods,et al.  Image forces and the behavior of mobile positive ions in silicon dioxide , 1973 .

[27]  D. Hamann,et al.  Variational Calculation of the Image Potential near a Metal Surface , 1972 .

[28]  D. J. Silversmith,et al.  Ionic Contamination and Transport of Mobile Ions in MOS Structures , 1971 .

[29]  N. J. Chou.  Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS Structures , 1971 .

[30]  P Bergveld,et al.  Development of an ion-sensitive solid-state device for neurophysiological measurements. , 1970, IEEE transactions on bio-medical engineering.

[31]  K. L. Chopra,et al.  Thin Film Phenomena , 1969 .

[32]  S. R. Hofstein.  SPACE‐CHARGE‐LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMS , 1967 .

[33]  S. R. Hofstein.  An investigation of instability and charge motion in metal-silicon oxide-silicon structures , 1966 .

[34]  A. L. McWhorter,et al.  The Gunn effect in polar semiconductors , 1966 .

[35]  A. S. Grove,et al.  Ion Transport Phenomena in Insulating Films , 1965 .