论文信息 - MBE growth of low-threshold-current InGaAs VCSEL structure

MBE growth of low-threshold-current InGaAs VCSEL structure

The structures of InGaAs/GaAs strained QW vertical cavity suurface-emitting lasers with low threshold current have been grown on tilted substrate by a modificatoy MBE system. The VCSEL structure contains 23.5 pairs n-type DBR , a strained InGaAs/GaAs 3QW active region ,and 20.5 pairs p-type DBR. The emission wavelength of InxGaixAs IGaAs QW lasers as a function of indium contents (x) and QW width has been studied theoretically and experimentally. The experimental results compared with theoretical calcuulation were in good agreement. The device measurements showed that room temperature CW operation of VCSEL has been achieved with the threshold current as low as 0.7 mA at 9430 A wavelength, and quantum efficiency above 12%.

[1] A. Scherer,et al. Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization , 1991 .

[2] H. Z. Chen,et al. Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities , 1987 .