Study of Zn diffusion into GaSb from the vapour and liquid phase

Abstract In order to develop a simple and reproducible method to fabricate p-n structures on GaSb for optoelectronic devices, the Zn-diffusion into n-doped GaSb substrates was studied. Two methods of Zn-diffusion were experimentally investigated: (a) diffusion from the vapour phase in a pseudo-closed box system and (b) diffusion from the liquid phase from a Ga-Sb-Zn melt. The process parameters, which provide good control over Zn surface concentration and p-n junction depth, were determined.