Analysis, design, and optimization of InGaP-GaAs HBT matched-impedance wide-band amplifiers with multiple feedback loops

The realization of matched impedance wide-band amplifiers fabricated by InGaP-GaAs heterojunction bipolar transistor (HBT) process is reported. The technique of multiple feedback loops was used to achieve terminal impedance matching and wide bandwidth simultaneously. The experimental results showed that a small signal gain of 16 dB and a 3-dB bandwidth of 11.6 GHz with in-band input/output return loss less than -10 dB were obtained. These values agreed well with those predicted from the analytic expressions that we derived for voltage gain, transimpedance gain, bandwidth, and input and output impedances. A general method for the determination of frequency responses of input/output return losses (or S/sub 11/, S/sub 22/) from the poles of voltage gain was proposed. The intrinsic overdamped characteristic of this amplifier was proved and emitter capacitive peaking was used to remedy this problem. The tradeoff between the input impedance matching and bandwidth was also found.

[1]  R.A. Blauschild,et al.  A 4-terminal wide-band monolithic amplifier , 1981, IEEE Journal of Solid-State Circuits.

[2]  Tai-Ping Sun,et al.  Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage , 1997 .

[3]  Robert G. Meyer,et al.  PRINCIPLES OF MONOLITHIC WIDEBAND FEEDBACK AMPLIFIER DESIGN , 1992 .

[4]  D. Nicholson,et al.  GaAs ICs in commercial OC-192 equipment , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[5]  Yi-Jen Chan,et al.  Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design , 1999, IEEE J. Solid State Circuits.

[6]  Hans-Martin Rein.  Si AND SiGe BIPOLAR ICs FOR 10 TO 40 Gb/s OPTICAL-FIBER TDM LINKS , 1998 .

[7]  Yo-Sheng Lin,et al.  High-performance Ga 0.51 In 0.49 P/GaAs airbridge gate MISFET's grown by gas-source MBE , 1997 .

[8]  L. Eastman,et al.  GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: design, fabrication, and device results , 1996 .

[9]  Tai-Ping Sun,et al.  Ga In P/In Ga As/GaAs Pseudomorphic Doped-Channel FET with High-Current Density and High-Breakdown Voltage , 1997 .

[10]  K.W. Kobayashi,et al.  Low dc power high-gain bandwidth product InAlAs/InGaAs-InP HBT direct-coupled amplifiers , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[11]  Yo-Sheng Lin,et al.  High-performance Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFET's grown by gas-source MBE , 1997 .

[12]  C.C. Huang,et al.  High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy , 1992, IEEE Electron Device Letters.

[13]  Chinchun Meng,et al.  A novel interpretation of transistor S-parameters by poles and zeros for RF IC circuit design , 2001 .

[14]  K.W. Kobayashi,et al.  A DC-10 GHz high gain-low noise GaAs HBT direct-coupled amplifier , 1995, IEEE Microwave and Guided Wave Letters.

[15]  A. Sedra.  Microelectronic circuits , 1982 .

[16]  I. Kipnis,et al.  Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHz , 1989, Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium.

[17]  Shey-Shi Lu,et al.  The origin of the kink phenomenon of transistor scattering parameter S/sub 22/ , 2001 .