论文信息 - Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates

Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates

We report on the demonstration of enhancement-mode n-channel GaN high-voltage metal-oxide field-effect transistor (MOSFET) realized on both p and n GaN epilayer on sapphire substrates. These MOSFETs, with different gate geometries, shows good DC characteristics with world-best field-effect mobility of 167 cm2/V-s and maximum blocking voltage of 940 V

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