Morphology and optical properties of gold thin films prepared by filtered arc deposition

Abstract This study report on the optical properties and scanning tunneling microscopy (STM) observations of the morphology of gold thin film prepared by a filtered arc deposition (FAD) process. The optical properties of FAD deposited films were found to be superior to those prepared with d.c. magnetron and comparable to the best reported properties in the literature. We found that Au film surface roughness increased with increasing substrate bias (i.e. ion energy). Also films prepared at zero substrate bias were found to be smoother to those prepared by thermal evaporation and magnetron sputtering. The smoothness of the gold film, excellent optical properties and high deposition rate makes them attractive for a number of fundamental and technological applications.

[1]  Jeeseong Hwang,et al.  Atomically flat gold films grown on hot glass , 1992 .

[2]  J. Ziegler,et al.  stopping and range of ions in solids , 1985 .

[3]  C. Mirkin,et al.  Ion-Gated Electron Transfer in Self-Assembled Monolayer Films , 1996 .

[4]  Marie-Luce Thèye,et al.  Investigation of the Optical Properties of Au by Means of Thin Semitransparent Films , 1970 .

[5]  P. Martin,et al.  Characterization of the Optical Properties and Composition of TiNx Thin Films by Spectroscopic Ellipsometry and X‐ray Photoelectron Spectroscopy , 1996 .

[6]  Finn Erland Christensen,et al.  Scanning tunneling microscopy studies of thin foil x-ray mirrors , 1990 .

[7]  Nathan I. Croitoru,et al.  Reactive-sputter-deposited TiN films on glass substrates , 1991 .

[8]  Ralph G. Nuzzo,et al.  Spontaneously organized molecular assemblies. 3. Preparation and properties of solution adsorbed monolayers of organic disulfides on gold surfaces , 1987 .

[9]  D. Dobrev Ion-beam-induced texture formation in vacuum-condensed thin metal films☆ , 1982 .

[10]  E. Palik Handbook of Optical Constants of Solids , 1997 .

[11]  A. A. Studna,et al.  Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV , 1983 .

[12]  R. Netterfield,et al.  The properties of TiN films deposited by filtered arc evaporation , 1994 .

[13]  R. Rosei,et al.  Splitting of the interband absorption edge in Au , 1975 .

[14]  I. Dutta,et al.  An X-ray diffraction (XRD) study of vapor deposited gold thin films on aluminum nitride (A1N) substrates , 1997 .

[15]  J. Hemminger,et al.  Preparation of gold thin films by epitaxial growth on mica and the effect of flame annealing , 1998 .