Semiconductor memory device and method of manufacturing the same

The present invention relates to a semiconductor memory device and a method of manufacturing the same, a semiconductor memory device according to the present invention, the through-penetrating a laminate, and the laminate including a conductive pattern and insulating pattern laminated alternately holwa, the channel pattern formed in the through hole, the first capping a conductive pattern formed on the channel pattern and the first to the side wall of the capping conductive patterns wherein the second capping conductive formed to first wrap the capping conductive pattern pattern and the first and a contact plug formed on the capping conductive pattern and the second capping conductive pattern.