Coplanar waveguide InP-based HEMT MMICs for microwave and millimeter wave applications

We have developed and fabricated a variety of single-stage coplanar waveguide MMIC amplifiers based on our InP-based AlInAs/GaInAs HEMT device technology. The measured f(t) of 0.15-micron devices was 120 GHz and fmax was 200 GHz. The dc transconductance was greater than 720 mS/mm. The 12-GHz single-stage MMIC amplifier had a noise figure of 1.3 dB with an associated gain of 16.0 dB. A 35 GHz single-stage amplifier had a measured gain of 10.9 dB and a measured input return loss of -14.4 dB. A 60 GHz single-stage amplifier had a measured gain of 8.4 dB and a measured input return loss of -18.4 dB.