Deviation from Matthiessen's rule in the presence of dislocation and impurity scattering: comment on published theories

Based on the work of M. Kaveh et al. (see ibid., vol.13, p.953, 1983) and Dugdale et al. (see Phys. Rev., vol.157, p.552, 1967). Recently Kaveh and Wiser proposed that the apparently high values of the specific dislocation resistivity in bent copper crystals may be due to a deviation from Matthiessen's rule associated with the relatively high impurity content. It is pointed out in this Comment that if a small error in their work on the dislocation-impurity system is corrected, it leads to a result which is identical in form to that predicted by the earlier theory of Dugdale and Basinski on the impurity-phonon and dislocation-phonon systems, despite the apparently quite different mathematical procedures used.