论文信息 - Room-temperature intersubband emission of GaN/AlN quantum wells at /spl lambda/=2.3 /spl mu/m

Room-temperature intersubband emission of GaN/AlN quantum wells at /spl lambda/=2.3 /spl mu/m

Optically-pumped intersubband emission of GaN/AlN quantum wells at room temperature has been experimentally demonstrated for the first time. The peak emission wavelength is at λ=2.3 µm. It is the shortest value ever reported for an intersubband device.

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