Development of bilayered TaSiOx-HTPSM: II

TaSiOx shifter has been developed for HT-PSM for ArF and F2 laser lithography. Adopting bilayered structure and embedding an etch-stop function into the transmittance control layer enable us to fabricate a TaSiOx-HT without quartz damage and to control the phase precisely. And less impact of TaSiOx shifter etching to CD was confirmed. It was confirmed this TaSiOx-HT was inspected by conventional inspection system without any problem.

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