Avalanche photodiode image sensor in standard silicon BiCMOS technology

Abstract To overcome the transistor-induced noise limitations of solid state image sensors at low light levels, we investigate a programmable camera concept based on an image sensor that employs the avalanche effect for photogenerated charge carriers. Each pixel consists of an avalanche photodiode (APD), high-voltage stabilization circuitry and image readout electronics. Special emphasis is placed on the integration and characterization of such an APD image sensor with an unmodified, commercially available silicon BiCMOS process. Experimental results of the first APD camera in BiCMOS technology with 12×24 pixels show individually programmable, stable diode gain up to a factor of 1000.

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