Refinement of Monte Carlo simulations of electron–specimen interaction in low-voltage SEM

A Monte Carlo tool is presented for the simulation of secondary electron (SE) emission in a scanning electron microscope (SEM). The tool is based on the Geant4 platform of CERN. The modularity of this platform makes it comparatively easy to add and test individual physical models. Our aim has been to develop a flexible and generally applicable tool, while at the same time including a good description of low-energy (<50 eV) interactions of electrons with matter. To this end we have combined Mott cross-sections with phonon-scattering based cross-sections for the elastic scattering of electrons, and we have adopted a dielectric function theory approach for inelastic scattering and generation of SEs. A detailed model of the electromagnetic fields from an actual SEM column has been included in the tool for ray tracing of secondary and backscattered electrons. Our models have been validated against experimental results through comparison of the simulation results with experimental yields, SE spectra and SEM images. It is demonstrated that the resulting simulation package is capable of quantitatively predicting experimental SEM images and is an important tool in building a deeper understanding of SEM imaging.