Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

[1]  Anthony J. Peacock,et al.  Compound Semiconductor Radiation Detectors , 2016 .

[2]  M. S. Furyer,et al.  Photoluminescence and photoelectric properties of CdTe crystals doped with Er atoms , 2015 .

[3]  I. O. Faryna,et al.  Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation , 2014 .

[4]  B. Venugopal,et al.  Influence of manganese ions in the band gap of tin oxide nanoparticles: structure, microstructure and optical studies , 2014 .

[5]  V. Strelchuk,et al.  Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors , 2013 .

[6]  J. Franc,et al.  Photoluminescence spectroscopy of semi-insulating CdZnTe and its correlation to resistivity and photoconductivity , 2013 .

[7]  Feng Tao,et al.  XAFS and XRD Studies of the Cd1-xZnxTe Crystal Fine Structure , 2013 .

[8]  D. I. Kurbatov,et al.  Structural and electrical properties of ZnS/CdTe and ZnTe/CdTe heterostructures , 2013 .

[9]  Hai Zhou,et al.  Effect of Al-induced crystallization on CdZnTe thin films deposited by radio frequency magnetron sputtering , 2013 .

[10]  Yurij P. Gnatenko,et al.  Low-temperature photoluminescence of II-VI films obtained by close-spaced vacuum sublimation , 2012 .

[11]  S. Noh,et al.  Feasibility study of direct-conversion x-ray detection using cadmium zinc telluride films , 2012 .

[12]  M. S. Furyer,et al.  Study of the photoluminescence and photoelectric properties of Pb1−XCdXI2 alloys , 2010 .

[13]  P. M. Bukivskij,et al.  Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation , 2010 .

[14]  K. Benz,et al.  Characterization of compensation and trapping in CdTe and CdZnTe: Recent advances , 2009 .

[15]  I. O. Faryna,et al.  Spectroscopic study of V doped Hg0.018Cd0.981Mn0.001Te bulk crystals as near-infrared materials for optical applications , 2009 .

[16]  Ezio Caroli,et al.  Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications , 2009, Sensors.

[17]  Y. Nemirovsky,et al.  Structure of CdZnTe films on glass , 2008 .

[18]  K. Murali Properties of brush plated CdxZn1−xTe thin films , 2008 .

[19]  Paul J. Sellin,et al.  Thick film compound semiconductors for X-ray imaging applications , 2006 .

[20]  K. Mochizuki,et al.  Growth of Cd1−xZnxTe(x∼0.04) films by hot-wall method and its evaluation , 2004 .

[21]  Y. L. Jeyachandran,et al.  Microstructure, Raman and optical studies on Cd0.6Zn0.4Te thin films , 2004 .

[22]  G. Contreras-Puente,et al.  Analysis of the 1.55 eV PL band of CdTe polycrystalline films , 2003 .

[23]  Su-Huai Wei,et al.  Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe , 2002 .

[24]  R. Triboulet,et al.  Annealing-induced Changes in the Electronic and Structural Properties of ZnTe Substrates , 2000 .

[25]  O. Zelaya-Ángel,et al.  Growth and characterization of Cd1−xZnxTe crystals with high Zn concentrations , 2000 .

[26]  T. Schlesinger,et al.  Optimal bandgap variants of Cd1−xZnxTe for high-resolution X-ray and gamma-ray spectroscopy , 1999 .

[27]  T. Feltgen,et al.  State of the art of (Cd,Zn)Te as gamma detector , 1999 .

[28]  Beatrice Fraboni,et al.  Deep energy levels in CdTe and CdZnTe , 1998 .

[29]  G. Contreras-Puente,et al.  Photoluminescence and multiphonon resonant Raman scattering in Ni-and Co-doped Zn1−xMnxTe crystals , 1998 .

[30]  R. Evrard,et al.  Photoluminescence of CdTe doped with arsenic and antimony acceptors , 1995 .

[31]  K. Matsuura,et al.  Defect-induced emission band in CdTe , 1994 .

[32]  J. F. Schetzina,et al.  Properties of CdZnTe crystals grown by a high pressure Bridgman method , 1992 .

[33]  G. Contreras-Puente,et al.  Polycrystalline Cd1−xZnxTe thin films on glass by pulsed laser deposition , 1991 .

[34]  Y. Marfaing,et al.  Localized excitons in II-VI semiconductor alloys: Density-of-states model and photoluminescence line-shape analysis. , 1990, Physical review. B, Condensed matter.

[35]  Saminadayar,et al.  Shallow donors in CdTe. , 1990, Physical review. B, Condensed matter.

[36]  Tenne,et al.  Photoluminescence of CdSe: Evidence for selective etching of donor states. , 1987, Physical review. B, Condensed matter.

[37]  Elliott,et al.  Effect of disorder on exciton binding in semiconductor alloys. , 1987, Physical review. B, Condensed matter.

[38]  Julio G. Mendoza-Alvarez,et al.  Influence of Cd vacancies on the photoluminescence of CdTe , 1986 .

[39]  P. M. Raccah,et al.  Optoelectronic properties of Cd1−xZnxTe films grown by molecular beam epitaxy on GaAs substrates , 1985 .

[40]  D. Fedorov,et al.  Localized excitons and energy transfer in ZnxCd1−xS solid solutions , 1985 .

[41]  E. Molva,et al.  Acceptor states in CdTe and comparison with ZnTe. General trends , 1984 .

[42]  M. Sturge,et al.  Erratum: Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductor CdS x Se 1-x , 1982 .

[43]  Mj Gelten,et al.  Optical properties of Cd3P2 , 1977 .

[44]  Hideo Watanabe,et al.  Photoluminescence of CdSe Single Crystals , 1974 .

[45]  D. M. Eagles Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band , 1960 .

[46]  Shin-Woong Park,et al.  Polycrystalline CdZnTe Thick Films for Low Energy X-ray: System Evaluation , 2006, 2006 International Conference of the IEEE Engineering in Medicine and Biology Society.

[47]  Vander Voort,et al.  Metallography, principles and practice , 1984 .