Properties of microcrystalline silicon. IV. Electrical conductivity, electron spin resonance and the effect of gas adsorption

For pt.III see ibid., vol.16, p.2005 (1983). Measured values of the electrical conductivity, sigma , and electron spin density (g=2.0057) of microcrystalline silicon can be essentially determined by the extent of the contamination of the samples by oxygen unless special precautions are taken as regards the sample preparation and/or handling. For samples deposited at a floating potential, two kinds of oxygen incorporation are identified: irreversible formation of Si-O bonds on the grain boundaries (and on the sample surface) and a reversible absorption which is probably associated with a nondissociative O2delta - (ads) state. The latter results in a decrease of sigma RT by up to five orders of magnitude, an increase of the activation energy, epsilon a, and of the preexponential factor, sigma 0, as well as in an increase of the electron spin density. A reversible desorption of oxygen leads to an increase of sigma RT up to not less than about 10-2 Omega -1 cm-1 and a decrease of the EPR signal below the detection limit of less than 1016 cm-3. In order to avoid such effects a negative bias has to be applied to the substrate during deposition. Samples of undoped mu c-Si deposited in this way show neither the incorporation of oxygen into the bulk nor significant changes in the dark conductivity even after long-term exposure to air.

[1]  James K. Gimzewski,et al.  Investigation of the initial stages of oxidation of microcrystalline silicon by means of X-ray photoelectron spectroscopy , 1983 .

[2]  S. Vepřek,et al.  Chemical relaxation study of the heterogeneous silicon-hydrogen system under plasma conditions , 1983 .

[3]  Zafar Iqbal,et al.  Optical absorption in hydrogenated microcrystalline silicon , 1983 .

[4]  Harold R. Kaufman,et al.  Technology and applications of broad‐beam ion sources used in sputtering. Part II. Applications , 1982 .

[5]  D. Jones,et al.  Thermoelectric power, hall effect and density-of-states measurements on glow-discharge microcrystalline silicon , 1982 .

[6]  J. Lothe.  Dislocations in anisotropic media The interaction energy , 1982 .

[7]  Zafar Iqbal,et al.  Effect of substrate bias on the properties of microcrystalline silicon films deposited in a glow discharge , 1982 .

[8]  S. Vepřek,et al.  Kinetic study of the heterogeneous Si/H system under low-pressure plasma conditions by means of mass spectrometry , 1982 .

[9]  Zafar Iqbal,et al.  Raman scattering from hydrogenated microcrystalline and amorphous silicon , 1982 .

[10]  S. Vepřek,et al.  Highlights of preparative solid state chemistry in low pressure plasmas , 1982 .

[11]  B. G. Yacobi,et al.  Effect of oxygen on the optoelectronic properties of amorphous hydrogenated silicon , 1981 .

[12]  Zafar Iqbal,et al.  Lattice dilatation of small silicon crystallites - implications for amorphous silicon , 1981 .

[13]  M. Muñoz,et al.  Electron stimulated oxidation of silicon surfaces , 1981 .

[14]  L. Kazmerski,et al.  A study of the initial oxidation of polycrystalline Si using surface analysis techniques , 1981 .

[15]  Zafar Iqbal,et al.  Raman scattering from small particle size polycrystalline silicon , 1981 .

[16]  Bruce E. Deal,et al.  Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers , 1981 .

[17]  Z. Iqbal,et al.  Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C , 1981 .

[18]  H. Fritzsche.  Characterized of glow-discharge deposited a-Si:H , 1980 .

[19]  J. W. Orton,et al.  REVIEW ARTICLE: The Hall effect in polycrystalline and powdered semiconductors , 1980 .

[20]  M. Brodsky,et al.  Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon , 1980 .

[21]  Z. Iqbal,et al.  Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °C , 1980 .

[22]  R. Pond.  The Measurement Of Excess Volume At Grain Boundaries Using Transmission Electron Microscopy , 1979 .

[23]  S. Vepřek,et al.  Recativity of solid silicon with hydrogen under conditions of a low pressure plasma , 1979 .

[24]  Giorgio Baccarani,et al.  Transport properties of polycrystalline silicon films , 1978 .

[25]  E. C. Freeman,et al.  Infrared vibrational spectra of rf-sputtered hydrogenated amorphous silicon , 1978 .

[26]  E. Symbalisty,et al.  Effect of adsorbed gases on the conductance of amorphous films of semiconducting silicon‐hydrogen alloys , 1978 .

[27]  V. Vítek,et al.  Periodic grain boundary structures in aluminium I. A combined experimental and theoretical investigation of coincidence grain boundary structure in aluminium , 1977, Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences.

[28]  J. Seto.  The electrical properties of polycrystalline silicon films , 1975 .

[29]  D. A. Smith,et al.  An experimental study of coincidence grain boundary structure using displacement fringes , 1974 .

[30]  Theodore I. Kamins,et al.  Hall Mobility in Chemically Deposited Polycrystalline Silicon , 1971 .

[31]  S. Vepřek,et al.  The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport , 1968 .

[32]  J. Dillon.  XXV. On the rules for algebraical multiplication , 1815 .

[33]  Charles Wilson.  XLIV. On a composition forming a substitute for Portland stone , 1813 .

[34]  Zafar Iqbal,et al.  A thermodynamic criterion of the crystalline-to-amorphous transition in silicon , 1982 .

[35]  G. Heiland,et al.  Homogeneous semiconducting gas sensors , 1981 .

[36]  S. Morrison,et al.  Semiconductor gas sensors , 1985 .

[37]  S. Ashok,et al.  Conducting mis diode gas detectors: the Pd/SiOx/Si hydrogen sensor , 1981 .

[38]  J. A. Taylor,et al.  Further examination of the Si KLL Auger line in silicon nitride thin films , 1981 .

[39]  Peter D. Persans,et al.  Effect of adsorbates and insulating layers on the conductance of plasma deposited a-Si:H , 1980 .

[40]  S. O. Sari,et al.  Near IR absorption in films of silicon containing oxygen , 1978 .

[41]  C. D. Wagner.  Chemical shifts of Auger lines, and the Auger parameter , 1975 .

[42]  H. O. McMahon,et al.  Study of the Structure of Quartz, Cristobalite, and Vitreous Silica by Reflection in Infrared , 1953 .