Recent progress in 40- To 100-Gbit/s-class optical communications ICS using InP-based HBT technologies
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Hideyuki Nosaka | Kimikazu Sano | K. Ishii | Takatomo Enoki | Kenji Kurishima | Minoru Ida | T. Shibata
[1] J. Hauenschild,et al. Demonstration of retiming capability of silicon bipolar time-division multiplexer operating to 24 Gbit/s , 1991 .
[2] H. Nosaka,et al. High-input-sensitivity, low-power 43 Gbit/s decision circuit using InP/InGaAs DHBTs , 2002 .
[3] Hans-Martin Rein,et al. 60 Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique , 1997 .
[4] T. Enoki,et al. An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.
[5] Agnieszka Konczykowska,et al. InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits , 2001 .
[6] Noboru Ishihara,et al. 3.5-Gb/s/spl times/4-ch Si bipolar LSI's for optical interconnections , 1995 .
[7] B. Jagannathan,et al. A 4.2-ps ECL ring-oscillator in a 285-GHz f/sub MAX/ SiGe technology , 2002, IEEE Electron Device Letters.
[8] Haruhiko Ichino,et al. Very-high-speed Si bipolar static frequency dividers with new T-type flip-flops , 1995, IEEE J. Solid State Circuits.