Scaling behaviors of 25-NM asymmetrically recessed metamorphic high electron-mobility transistors
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K.H.G. Duh | P. Seekell | Dong Xu | P.M. Smith | P. Chao | Dong Xu | Xiaoping S. Yang | W. Kong | P. Seekell | L. Pleasant | L. Mohnkern | H. Karimy | K. Duh | P.M. Smith | Xiaoping Yang | P.C. Chao | L. Mohnkern | H. Karimy | L. Mt. Pleasant | Wendell M.T. Kong
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