Optical constants of amorphous silicon films near the main absorption edge
暂无分享,去创建一个
[1] R. Grigorovici,et al. Optical Properties and Electronic Structure of Amorphous Germanium , 1966, 1966.
[2] P. Grant,et al. Optical Properties of Thin Germanium Films in the Wavelength Range 2000-6000 à , 1966 .
[3] H. Ehrenreich,et al. Optical Properties of Semiconductors , 1963 .
[4] L. Holland. Physik Dünner Schichten: By H. Mayer. Vols. I and II published 1950 and 1955 respectively, 326 pages and 390 pages. (Wissenschaftliche Verlagsgesellschaft m.b.H., Stuttgart). , 1959 .
[5] G. Voigtlaender‐Tetzner. Zur Theorie der röntgenographischen Verteilungskurven von Flüssigkeiten und amorphen Stoffen , 1958 .
[6] H. Y. Fan,et al. Infra-red Absorption in Semiconductors , 1956 .
[7] R. Newman,et al. Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K , 1955 .
[8] G. G. Macfarlane,et al. Infrared Absorption of Silicon Near the Lattice Edge , 1955 .
[9] V. Roberts,et al. Infrared Absorption of Germanium near the Lattice Edge , 1955 .
[10] K. Koller. Reflexion und Durchlässigkeit dünner Metallschichten , 1938 .