MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss
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InP photonic circuits are becoming increasingly complex and require different layer-stacks for different applications like interconnecting, switching or amplification. This integration requires epitaxial regrowth steps of different waveguide material-compositions with low butt-joint loss. In this paper we present experiments with transparant InGaAsP/InP waveguides which were grown using a two step MOVPE process. The propagation loss in the waveguides which were grown in the first step and in the second step showed no significant difference. In addition, the loss in the butt-joints between the two materials was below 0.1 dB.