InGaAsN/GaAs lasers: high performance and long lifetime
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[1] Takeshi Kitatani,et al. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance , 1996 .
[2] C. S. Peng,et al. Thermal annealing effect on InGaAsN/GaAs lasers , 2004, SPIE OPTO.
[3] A. Yu. Egorov,et al. InGaAsN/GaAs Heterostructures for Long-Wavelength Light-Emitting Devices , 2000 .
[4] Nelson Tansu,et al. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers , 2002 .
[5] M. Asheghi,et al. Measurement of the thermal conductivity anisotropy in polyimide films , 1999 .
[6] Michael C. Larson,et al. 1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions , 2000 .
[7] M. Pessa,et al. 1.32-μm GaInNAs-GaAs laser with a low threshold current density , 2002, IEEE Photonics Technology Letters.
[8] P. Studenkov,et al. Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers , 2000, IEEE Photonics Technology Letters.
[9] Martin D. Dawson,et al. Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content , 2000 .
[10] Nelson Tansu,et al. High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy , 2003 .
[11] Henning Riechert,et al. Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 /spl mu/m , 2000 .