Milestones of microwave and millimeter-wave technologies

The helical structure of progress in microwave and millimeter-wave technologies, with a focus on active device technology and circuit technology, is overviewed with some examples. The position of, and the possibilities for emerging GaN power devices and Si RF devices are described. In addition, as a new trend for methods in global analysis combining electro-magnetic waves and semiconductor devices, FDTD co-simulation is overviewed with the latest example on a 60GHz amplifier module. Finally, the circuit technology in which the helical structure strongly dominates is overviewed. As one of endless targets for microwave circuit technology, the latest design technique for high power efficiency microwave circuits is introduced, in which co-simulation of electro-magnetic waves and semiconductor devices are effectively used.

[1]  Kaoru Inoue,et al.  Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique , 2007, IEICE Electron. Express.

[2]  R. Ishikawa,et al.  Global analysis for a surface wave mode HFET amplifier module at 60 GHz by EM-device co-simulation , 2007, 2007 European Microwave Integrated Circuit Conference.

[3]  K. Honjo,et al.  Finger Length Optimization for AlGaN/GaN HEMT and InGaP/GaAs HBT by Using FDTD Electromagnetic and Device Co-Simulation Technique , 2007 .

[4]  R. Ishikawa,et al.  Inverse Class-F AlGaN/GaN HEMT Microwave Amplifier Based on Lumped Element Circuit Synthesis Method , 2008, IEEE Transactions on Microwave Theory and Techniques.

[5]  K. Honjo,et al.  Direct Analysis Technique for Long-Finger HBT by Electromagnetic and Device Co-Simulation , 2008, IEEE Transactions on Microwave Theory and Techniques.

[6]  K. Honjo,et al.  Q-factor definition and evaluation for spiral inductors fabricated using wafer-level CSP technology , 2005, IEEE Transactions on Microwave Theory and Techniques.

[7]  F. Raab.  Maximum efficiency and output of class-F power amplifiers , 2001 .

[8]  Yukio Takahashi,et al.  Accurate Distortion Prediction for Thermal Memory Effect in Power Amplifier Using Multi-Stage Thermal RC-Ladder Network , 2007, IEICE Trans. Electron..

[9]  Kazuhiko Honjo,et al.  A simple circuit synthesis method for microwave class-F ultra-high-efficiency amplifiers with reactance-compensation circuits , 2000 .

[10]  Wolfgang Fichtner,et al.  Global modeling of microwave applications by combining the FDTD method and a general semiconductor device and circuit simulator , 1999 .