论文信息 - First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm−2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

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