论文信息 - Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet. - 字舞流文

Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet.

M. Nestoklon | S. Rouvimov | V. Jmerik | D. Nechaev | T. Shubina | E. A. Evropeitsev | B. Gil | A. Toropov | D. S. Smirnov | V. K. Kaibyshev | G. Budkin | S. Ivanov