Resonanz-Tunneldioden und Heterobipolartransistoren in dynamischen Digitalschaltungen hoher Funktionsdichte

This work deals with the design of digital circuits and architectures that bases on the resonanttunneling-heterostructure-bipolar-transistor (RTBT). Starting from an analysis of the electronic properties of the current driven devices (HBT, RTD), the monolithic integration of the three terminal RTBT is discussed. Due to the combination of the monostable-bistable-transition-logicelement (MOBILE) with the RTBT, it has been the first time to demonstrate a dynamic, current driven circuit concept for quantum effect devices that fulfills all basic needs of a robust logic family. The output buffer that is necessary to invert and to regenerate the output signal has been discussed both on the background of theory and on the background of measurement results of different samples. This study demonstrates that the RTBT-MOBILE is ready for use in digital circuitry such as linear threshold gates which offer a highly reduced logic depth and circuit complexity. The gate delay of the RTBT-MOBILE is competitive to other III-V logic families while using less devices and offering a lower power consumption per logic function. Recent results of silicon based interband-tunneling devices and resonant-tunneling devices show that the results of this work can be transfered to the silicon.

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