Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors.