Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by using c-axis aligned crystalline oxide semiconductor transistor with L of 60 nm
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Shunpei Yamazaki | Yuto Yakubo | Takanori Matsuzaki | Takashi Okuda | Shuhei Nagatsuka | Tatsuya Onuki | Yutaka Okazaki | Masayuki Sakakura | Tomoaki Atsumi | Suguru Hondo | Masaharu Nagai | Y. Okazaki | S. Yamazaki | T. Okuda | T. Onuki | T. Matsuzaki | T. Atsumi | Yuki Hata | Yoshitaka Yamamoto | Kiyoshi Kato | Y. Yakubo | M. Sakakura | Masumi Nomura | Masumi Nomura | Y. Hata | Yoshitaka Yamamoto | M. Nagai | K. Kato | S. Nagatsuka | S. Hondo
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