Diffraction effects in Auger quantitative analysis on III–V compounds

[1]  S. Chambers Epitaxial film crystallography by high-energy Auger and X-ray photoelectron diffraction , 1991 .

[2]  S. Valeri,et al.  Alkali metals adsorption kinetics on sputtered and cleaved GaAs(110) surfaces , 1991 .

[3]  Gao,et al.  Incident-beam effects in electron-stimulated Auger-electron diffraction. , 1991, Physical review. B, Condensed matter.

[4]  S. Valeri,et al.  AES and EELS study of alkali-metal adsorption kinetics on either cleaved or sputtered GaAs and InP (110) surfaces , 1990 .

[5]  S. Valeri,et al.  AES, EELS and XPS study of ion‐induced GaAs and InP(110) surface and subsurface modifications , 1990 .

[6]  J. Olivier,et al.  Estimation of structural damage induced by chemical or ionic processes on the surface of crystalline binary compounds by X-ray photoelectron diffraction: application to chemically etched GaAs (001) surface , 1989 .

[7]  M. Kudo,et al.  Estimation of Low-Energy Ion Bombardment Damage on GaAs(001) Surface by X-Ray Photoelectron Diffraction , 1986 .

[8]  H. Bishop,et al.  Crystalline effects in Auger electron spectroscopy , 1984 .

[9]  Ryuichi Shimizu,et al.  Quantitative Analysis by Auger Electron Spectroscopy , 1983 .

[10]  D. P. Woodruff,et al.  Surface science lettersCrystallographic incident beam effects in quantitative Auger electron spectroscopy , 1980 .

[11]  S. Valeri,et al.  Crystalline effects on Auger and photoelectron emission from clean and Cs-covered GaAs(110) surfaces , 1992 .

[12]  H. Bishop Measurements of the magnitude of crystalline effects in Auger electron spectroscopy , 1990 .

[13]  J. Olivier,et al.  XPS stoichiometry measurements on surfaces of III–V crystalline compounds , 1989 .

[14]  J. Olivier,et al.  Angle-resolved X-Ray photoelectron spectroscopy for the characterization of GaAs(OO1) surfaces , 1987 .