论文信息 - A novel hot-hole injection degradation model for lateral nDMOS transistors

A novel hot-hole injection degradation model for lateral nDMOS transistors

For the first time, the degradation of a DMOS transistor is shown to be due to hot hole injection in the drift region field oxide. The saturation effects observed in the parameter shifts are reproduced by a new degradation model using the bulk current as the driving force. A very good agreement with experimental data is obtained for various stressing conditions.

R. Degraeve | G. Groeseneken | M. Tack | P. Moens

[1] R. Bussard. Some Considerations of Dynamic Behavior in the Plasma Thermocouple , 1962 .

[2] Chenming Hu,et al. Hot-electron-induced MOSFET degradation—Model, monitor, and improvement , 1985, IEEE Transactions on Electron Devices.

[3] Cheng T. Wang,et al. Hot carrier design considerations for MOS devices and circuits , 1992 .

[4] H. Hwang,et al. Physical Analysis for Saturation Behavior of Hot-Carrier Degradation in Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Field Effect Transistors , 1994 .

[5] B. Riccò,et al. Hot-carrier reliability in submicrometer LDMOS transistors , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[6] S. Manzini,et al. Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[7] R. Versari,et al. Experimental study of hot-carrier effects in LDMOS transistors , 1999 .

[8] Guido Groeseneken,et al. A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation , 2001, Microelectron. Reliab..