Light emitting devices based on silicon nanoclusters

In this work we report the electrical and optical properties of innovative MOS devices, where the dielectric layer consists of a low temperature annealed substoichiometric SiO/sub x/ film prepared by plasma enhanced chemical vapor deposition (PECVD), eventually doped with Er ions.

[1]  Y. Kanzawa,et al.  Photoluminescence of Si-Rich SiO2 Films: Si Clusters as Luminescent Centers , 1993 .

[2]  Takeda,et al.  Visible photoluminescence from oxidized Si nanometer-sized spheres: Exciton confinement on a spherical shell. , 1993, Physical review. B, Condensed matter.

[3]  L. Canham,et al.  Identification of radiative transitions in highly porous silicon , 1993 .

[4]  Y. Xie,et al.  Light Emission from Silicon , 1993, Science.

[5]  A. A. Seraphin,et al.  SYNTHESIS AND PROCESSING OF SILICON NANOCRYSTALLITES USING A PULSED LASER ABLATION SUPERSONIC EXPANSION METHOD , 1994 .

[6]  Alberto Carnera,et al.  Room‐temperature electroluminescence from Er‐doped crystalline Si , 1994 .

[7]  Anthony J. Kenyon,et al.  OPTICAL-PROPERTIES OF PECVD ERBIUM-DOPED SILICON-RICH SILICA - EVIDENCE FOR ENERGY-TRANSFER BETWEEN SILICON MICROCLUSTERS AND ERBIUM IONS , 1994 .

[8]  Kazuo Saitoh,et al.  Visible photoluminescence in Si+‐implanted silica glass , 1994 .

[9]  D. J. Lockwood,et al.  Quantum confinement and light emission in SiO2/Si superlattices , 1995, Nature.

[10]  J. Budai,et al.  Growth of Ge, Si, and SiGe nanocrystals in SiO2 matrices , 1995 .

[11]  Harry A. Atwater,et al.  Defect‐related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2 , 1996 .

[12]  A. G. Cullis,et al.  The structural and luminescence properties of porous silicon , 1997 .

[13]  Keiichi Yamamoto,et al.  1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+ , 1997 .

[14]  P. D. Townsend,et al.  Optical properties of silicon nanoclusters fabricated by ion implantation , 1998 .

[15]  Harry A. Atwater,et al.  Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation , 1998 .

[16]  D. Mcbranch,et al.  Initial carrier relaxation dynamics in ion-implanted Si nanocrystals: Femtosecond transient absorption study , 1998 .

[17]  G. Franzò,et al.  The excitation mechanism of rare-earth ions in silicon nanocrystals , 1999 .

[18]  A. Galeckas,et al.  Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2 , 1999 .

[19]  Francesco Priolo,et al.  Quantum confinement and recombination dynamics in silicon nanocrystals embedded in Si/SiO2 superlattices , 2000 .

[20]  H. Atwater,et al.  Size-dependent electron-hole exchange interaction in Si nanocrystals , 2000 .

[21]  A. G. Nassiopoulou,et al.  Photoluminescence from nanocrystalline silicon in Si/SiO2 superlattices , 2000 .

[22]  Domenico Pacifici,et al.  Er3+ ions–Si nanocrystals interactions and their effects on the luminescence properties , 2000 .

[23]  L. D. Negro,et al.  Optical gain in silicon nanocrystals , 2000, Nature.

[24]  Fabio Iacona,et al.  Correlation between luminescence and structural properties of Si nanocrystals , 2000 .

[25]  D. Zahn,et al.  Self-trapped exciton recombination in silicon nanocrystals , 2001 .

[26]  Domenico Pacifici,et al.  Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals , 2001 .

[27]  Maria Miritello,et al.  Excitation and de-excitation properties of silicon quantum dots under electrical pumping , 2002 .

[28]  F. Priolo,et al.  Electroluminescence of silicon nanocrystals in MOS structures , 2002 .