Design strategies for 157-nm single-layer photoresists: lithographic evaluation of a poly(α -trifluoromethyl vinyl alcohol) copolymer

Poly(vinyl alcohol-co-(alpha) -trifluoromethyl vinyl alcohol) (PVA-co-CF3PVA) protected with an acid cleavable group was prepared as a single-layer photoresist for use in 157 nm VUV lithography. It was found that the (alpha) -trifluoromethyl substituent renders PVA-co-CF3PVA readily soluble in 0.262 N TMAH. The protected polymer can be spin-coated from PGMEA and preliminary studies using 248 nm exposure showed a THP protected PVA-co-CF3PVA undergoes chemically amplified deprotection with a clearing dose of approximately 15 mJ/cm2. Using a VUV spectrometer, absorption coefficients of approximately 3 micrometer-1 were observed at 157 nm with PVA-co-CF3PVA and THP protected PVA-co-CF3PVA. Detailed lithographic evaluation of the polymer is underway and design strategies for 157 nm single-layer photoresists will be discussed.