Defect reduction effects in GaAs on Si substrates by thermal annealing
暂无分享,去创建一个
Yoshio Itoh | Akio Yamamoto | Masami Tachikawa | Masafumi Yamaguchi | Mitsuru Sugo | M. Yamaguchi | A. Yamamoto | M. Sugo | Y. Itoh | M. Tachikawa
[1] J. Lee,et al. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates , 1987 .
[2] Sun Keun Choi,et al. Dislocation Velocities in GaAs , 1977 .
[3] M. Yamaguchi,et al. Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes , 1987 .
[4] Masahiro Akiyama,et al. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD , 1984 .
[5] Takashi Nishimura,et al. Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of InxGa1-xAs-GaAsyP1-y , 1987 .
[6] Hadis Morkoç,et al. Dislocation reduction in epitaxial GaAs on Si(100) , 1986 .