Graphene-induced in-situ growth of monolayer and bilayer 2D SiC crystals toward high-temperature electronics.
暂无分享,去创建一个
H. Yang | Junping Hu | L. Ang | Dechao Geng | Wei Fu
[1] M. Syväjärvi,et al. Atomically manipulated proton transfer energizes water oxidation on silicon carbide photoanodes , 2018 .
[2] Zhi Jin,et al. Mechanism of SiOx particles formation during CVD graphene growth on Cu substrates , 2018, Carbon.
[3] H. Ohmori,et al. Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD , 2018 .
[4] L. Mai,et al. Single-crystalline integrated 4H-SiC nanochannel array electrode: toward high-performance capacitive energy storage for robust wide-temperature operation , 2018 .
[5] E. Janzén,et al. Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species , 2018 .
[6] B. Zeghbroeck,et al. Epitaxial growth of cubic silicon carbide on silicon using hot filament chemical vapor deposition , 2017 .
[7] Jannik C. Meyer,et al. Computational insights and the observation of SiC nanograin assembly: towards 2D silicon carbide , 2017, Scientific Reports.
[8] E. Janzén,et al. Ab Initio Study of Growth Mechanism of 4H-SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3 , 2017 .
[9] Jie Yang,et al. Controlled assembly of SiOx nanoparticles in graphene , 2016 .
[10] G. Yu,et al. Large‐Area Growth of Five‐Lobed and Triangular Graphene Grains on Textured Cu Substrate , 2016 .
[11] Hong Yang,et al. Visible-Light-Driven Selective Photocatalytic Hydrogenation of Cinnamaldehyde over Au/SiC Catalysts. , 2016, Journal of the American Chemical Society.
[12] Yeliang Wang,et al. Copper vapor-assisted growth of hexagonal graphene domains on silica islands , 2016 .
[13] M. Fanetti,et al. A facile chemical method for the synthesis of 3C–SiC nanoflakes , 2016 .
[14] Sakineh Chabi,et al. From graphene to silicon carbide: ultrathin silicon carbide flakes , 2016, Nanotechnology.
[15] Myung-Hyun Lee,et al. High-Temperature Chemical Vapor Deposition for SiC Single Crystal Bulk Growth Using Tetramethylsilane as a Precursor , 2014 .
[16] Gunuk Wang,et al. Large hexagonal bi- and trilayer graphene single crystals with varied interlayer rotations. , 2014, Angewandte Chemie.
[17] Liping Huang,et al. Uniform hexagonal graphene flakes and films grown on liquid copper surface , 2012, Proceedings of the National Academy of Sciences.
[18] M. Di Vece,et al. SiC: a photocathode for water splitting and hydrogen storage. , 2009, Angewandte Chemie.
[19] A. Henry,et al. Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers , 2002 .
[20] A. Henry,et al. Investigation of the temperature profile in a hot-wall SiC chemical vapor deposition reactor , 2002 .
[21] Lai-fei Cheng,et al. Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere , 1999 .
[22] H. Matsunami,et al. Epitaxial growth and electric characteristics of cubic SiC on silicon , 1987 .
[23] Herbert A. Will,et al. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices , 1983 .
[24] I. Cutler,et al. The Reduction of Silica with Carbon and Silicon Carbide , 1979 .
[25] N. Formigoni,et al. β‐Silicon Carbide Films , 1969 .
[26] E. Janzén,et al. Ab Initio Study of Growth Mechanism of 4 H-SiC : Adsorption and Surface Reaction of C 2 H 2 , C 2 H 4 , CH 4 , and CH 3 , 2017 .
[27] Ö. Danielsson. Simulations of Silicon Carbide Chemical Vapor Deposition , 2002 .
[28] K. Kuroiwa,et al. Vapor‐Phase Deposition of Beta‐Silicon Carbide on Silicon Substrates , 1973 .
[29] J. D. Baird,et al. Reaction between silica and carbon and the activity of silica in slag solution , 1958 .