High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications
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Dionyz Pogany | Gottfried Strasser | Joachim Würfl | Anton Köck | Joff Derluyn | Clément Fleury | Mattia Capriotti | Matteo Rigato | Oliver Hilt | Stephan Steinhauer | S. Steinhauer | A. Köck | G. Strasser | D. Pogany | J. Derluyn | O. Hilt | J. Würfl | M. Capriotti | M. Rigato | C. Fleury | Mattia Capriotti | Clément Fleury
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