Figure of Merit of Semiconductor Structures Determination of the impact on the system efficiency of LLC converter

This article has been realized in order to show simplified design procedure on how to meet the standards for dc-dc converters, which are being constantly increased. Hence we decided to analyze several generations of power semiconductor MOSFET and diode structures. With the use of simulation we've analyzed power losses (switching losses and conduction losses) during Zero Voltage Switching commutation mode. Parametric simulations were carried out at the conditions that meet electrical parameters of switched mode power supplies suited for distributed power systems. The aim of determination of switching losses at different conditions during ZVS mode is to see, whether determination of figure of merit (FOM) parameter can be considered as reliable indicator for proper device selection for target application. Consequently the FOM parameter for selected types of transistors and diodes in terms of several FOM methodologies has been determined. This parameter shall represent a measure of semiconductor suitability for high frequency power transistor application. The relevancy of FOM parameter will be finally evaluated in the way of efficiency (one of qualitative indicator) investigation of proposed LLC converter. Based on the evaluation of simulation analysis and on efficiency investigation of proposed LLC converter the confirmation of FOM relevancy will be confirmed.

[1]  Pavol Spanik,et al.  Efficiency Increase of Switched Mode Power Supply through Optimization of Transistor's Commutation Mode , 2010 .

[2]  Pavol Spanik,et al.  Performance Investigation of Dynamic Characteristics of Power Semiconductor Diodes , 2010 .

[3]  Jozef Kuchta,et al.  Single Phase PWM Rectifier in Traction Application , 2011 .

[4]  Vladimir Kindl,et al.  Key construction aspects of resonant wireless low power transfer system , 2014, 2014 ELEKTRO.

[5]  I. Ková,et al.  Inductive Coupling of Power Converter ’ s – EMC , 2009 .

[6]  Frivaldsloy,et al.  Hard Switching Process Optimization for Selected Transistor Suited for High Power and High Frequency Operation , 2010 .

[7]  F.C. Lee,et al.  Performance evaluation of CoolMOS/sup /spl trade// and SiC diode for single-phase power factor correction applications , 2003, Eighteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2003. APEC '03..

[8]  E. Santi,et al.  An assessment of wide bandgap semiconductors for power devices , 2003 .

[9]  P. Rafajdus,et al.  Electromagnetic design of Ironless Permanent Magnet Synchronous Linear Motor , 2008, 2008 International Symposium on Power Electronics, Electrical Drives, Automation and Motion.

[10]  Tatsuo Sakai,et al.  New power device figure of merit for high-frequency applications , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

[11]  Mariana Benova,et al.  Using Complex Conjugated Magnitudes- and Orthogonal Park/Clarke Transformation Methods of DC/AC/AC Frequency Converter , 2009 .

[12]  J. Tihanyi,et al.  A new generation of high voltage MOSFETs breaks the limit line of silicon , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[13]  Jess Brown,et al.  Power MOSFET Basics : Understanding MOSFET Characteristics Associated With The Figure of Merit , 2003 .

[14]  Pavol Spanik,et al.  Experimental analysis and optimization of key parameters of ZVS mode and its application in the proposed LLC converter designed for distributed power system application , 2013 .

[15]  Pavel Brandstetter,et al.  Application of RBF Network in Rotor Time Constant Adaptation , 2011 .